hzs-n series silicon epitaxial planar zener diodes for stabilized power supply ade-208-124 (z) rev. 0 aug. 1993 features ? low leakage, low zener impedance and maximum power dissipation of 400mw are ideally suited for stabilized power supply, etc. ? wide spectrum from 1.88v through 38.52v of zener voltage provide flexible application. ? suitable for 5mm-pitch high speed automatic insertion. ordering information type no. mark package code hzs-n series type no. mhd outline 1. cathode 2. anode cathode band type no. 1 2 2 b 7.5
hzs-n series rev.0, aug. 1993, page 2 of 9 absolute maximum ratings (ta = 25c) item symbol value unit power dissipation pd 400 mw junction temperature tj 200 c storage temperature tstg ?55 to +175 c electrical characteristics (ta = 25c) zener voltage reverse current dynamic resistance v z (v) * test condition i r ( a) test condition r d ( ? ? ? ? ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs2.0n b1 1.88 2.10 5 120 0.5 100 5 b2 2.02 2.20 hzs2.2n b1 2.12 2.30 5 120 0.7 100 5 b2 2.22 2.41 hzs2.4n b1 2.33 2.52 5 120 1.0 100 5 b2 2.43 2.63 hzs2.7n b1 2.54 2.75 5 100 1.0 110 5 b2 2.69 2.91 hzs3.0n b1 2.85 3.07 5 50 1.0 120 5 b2 3.01 3.22 hzs3.3n b1 3.16 3.38 5 20 1.0 120 5 b2 3.32 3.53 hzs3.6n b1 3.47 3.68 5 10 1.0 120 5 b2 3.62 3.83 hzs3.9n b1 3.77 3.98 5 5 1.0 120 5 b2 3.92 4.14 hzs4.3n b1 4.05 4.26 5 5 1.0 120 5 b2 4.20 4.40 b3 4.34 4.53 note: tested with pulse (p w = 40ms)
hzs-n series rev.0, aug. 1993, page 3 of 9 electrical characteristics (cont) (ta = 25c) zener voltage reverse current dynamic resistance v z (v) * test condition i r ( a) test condition r d ( ? ? ? ? ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs4.7n b1 4.47 4.65 5 5 1.0 100 5 b2 4.59 4.77 b3 4.71 4.91 hzs5.1n b1 4.85 5.03 5 5 1.5 70 5 b2 4.97 5.18 b3 5.12 5.35 hzs5.6n b1 5.29 5.52 5 5 2.5 40 5 b2 5.46 5.70 b3 5.64 5.88 hzs6.2n b1 5.81 6.06 5 5 3.0 30 5 b2 5.99 6.24 b3 6.16 6.40 hzs6.8n b1 6.32 6.59 5 2 3.5 25 5 b2 6.52 6.79 b3 6.70 6.97 hzs7.5n b1 6.88 7.19 5 0.5 4.0 25 5 b2 7.11 7.41 b3 7.33 7.64 hzs8.2n b1 7.56 7.90 5 0.5 5.0 20 5 b2 7.82 8.15 b3 8.07 8.41 hzs9.1n b1 8.33 8.70 5 0.5 6.0 20 5 b2 8.61 8.99 b3 8.89 9.29 hzs10n b1 9.19 9.59 5 0.2 7.0 20 5 b2 9.48 9.90 b3 9.82 10.30 note: tested with pulse (p w = 40ms)
hzs-n series rev.0, aug. 1993, page 4 of 9 electrical characteristics (cont) (ta = 25c) zener voltage reverse current dynamic resistance v z (v) * test condition i r ( a) test condition r d ( ? ? ? ? ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs11n b1 10.18 10.63 5 0.2 8.0 20 5 b2 10.50 10.95 b3 10.82 11.26 hzs12n b1 11.13 11.63 5 0.2 9.0 25 5 b2 11.50 11.92 b3 11.80 12.30 hzs13n b1 12.18 12.71 5 0.2 10 25 5 b2 12.59 13.16 b3 13.03 13.62 hzs15n b1 13.48 14.09 5 0.2 11 25 5 b2 13.95 14.56 b3 14.42 15.02 hzs16n b1 14.87 15.50 5 0.2 12 25 5 b2 15.33 15.96 b3 15.79 16.50 hzs18n b1 16.34 17.06 5 0.2 13 30 5 b2 16.90 17.67 b3 17.51 18.30 hzs20n b1 18.14 18.96 5 0.2 15 30 5 b2 18.80 19.68 b3 19.52 20.45 hzs22n b1 20.23 21.08 5 0.2 17 30 5 b2 20.76 21.65 b3 21.22 22.09 b4 21.68 22.61 note: tested with pulse (p w = 40ms)
hzs-n series rev.0, aug. 1993, page 5 of 9 electrical characteristics (cont) (ta = 25c) zener voltage reverse current dynamic resistance v z (v) * test condition i r ( a) test condition r d ( ? ? ? ? ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs24n b1 22.26 23.12 5 0.2 19 35 5 b2 22.75 23.73 b3 23.29 24.27 b4 23.81 24.81 hzs27n b1 24.26 25.52 5 0.2 21 45 5 b2 24.97 26.26 b3 25.63 26.95 b4 26.29 27.64 hzs30n b1 26.99 28.39 5 0.2 23 55 5 b2 27.70 29.13 b3 28.36 29.82 b4 29.02 30.51 hzs33n b1 29.68 31.22 5 0.2 25 65 5 b2 30.32 31.88 b3 30.90 32.50 b4 31.49 33.11 hzs36n b1 32.14 33.79 5 0.2 27 75 5 b2 32.79 34.49 b3 33.40 35.13 b4 34.01 35.77 hzs39n b1 34.68 36.47 5 0.2 30 85 5 b2 35.36 37.19 b3 36.00 37.85 b4 36.63 38.52 note: tested with pulse (p w = 40ms) type no. is as follows: hzs2.0nb1, hzs2.0nb2, hzs39nb4.
hzs-n series rev.0, aug. 1993, page 6 of 9 10 8 6 4 2 0 4 8 12 16 20 zener current i (ma) z zener voltage v (v) z 24 28 32 40 36 hzs6.8n hzs13n hzs15n hzs18n hzs2.0n hzs20n hzs22n hzs36n hzs39n hzs30n hzs2.4n hzs3.0n hzs3.6n hzs4.3n hzs5.1n hzs6.2n hzs7.5n hzs8.2n hzs9.1n hzs10n hzs11n hzs12n hzs16n hzs24n hzs27n hzs33n fig.1 zener current vs. zener voltage 0510 15 20 25 30 35 40 zener voltage v (v) zener voltage temperature coefficient (%/ c) z 50 40 30 20 10 0 ? 10 ? 20 ? 30 ? 40 ? 50 0.10 0.08 0.06 0.04 0.02 0 ? 0.02 ? 0.04 ? 0.06 ? 0.08 ? 0.10 z zener voltage temperature coefficient (mv/ c) z %/ c mv/ c fig.2 temperature coefficient vs. zener voltage
hzs-n series rev.0, aug. 1993, page 7 of 9 500 400 300 200 100 200 150 100 50 0 ambient temperature ta ( c) power dissipation p (mw) d 0 2.5mm 3mm printed circuit board 100 180 1.6t mm material: paper phenol l l = 5mm l = 10mm (publication value) fig.3 power dissipation vs. ambient temperature
hzs-n series rev.0, aug. 1993, page 8 of 9 package dimensions 2 abbreviation of type name type name without hzs n. zener voltage classification symbol equal to b1 or b3. expanded drawing of marking 26.0 min 2.4 max 2.0 max 0.4 26.0 min cathode band (black) type no. (black) 2 b 7.5 b 7.5 12 hitachi code jedec code eiaj code weight (g) mhd do-34 0.084 1 2 cathode anode unit: mm ???
hzs-n series rev.0, aug. 1993, page 9 of 9 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 4.0
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